Thin Film | AlN 170 W/mK | TiW/Au | .025″





Material: Aluminum Nitride (AlN)
Size: 2.0” x 2.0″ x .025″
Finish: Polished Both Sides
Metallization: Titanium-Tungsten (TiW): 500Å; Gold (Au): 100 µ-in both sides

Aluminum Nitride (AlN)

Aluminum nitride substrates are used in microelectronics applications for medium to high power circuits requiring extremely good thermal conductivity 170 W/mK along with excellent mechanical and electrical properties. Being non-toxic they are finding increasing application in replacing beryllium oxide substrates which have inherent toxic properties.


Benefits of Aluminum Nitride (AlN) ceramic substrates

  • High thermal conductivity
  • High electrical insulation properties
  • Excellent Thermal Shock resistance
  • Excellent metalizing properties with specialized thick-film pastes, thin-films, and DBCu
  • Low Thermal Expansion at 4.6 ppm/°C
  • Excellent high-temperature characteristics
  • Available in lapped and polished grades


Notice: All International Aluminum Nitride (AlN) orders are subject to International Traffic in Arms Regulations (ITAR) and Export Administration Regulations (EAR).

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